The roles of Bi in InAs and InAsBi nanostructure growth

Author:

Zhao Bijun12,Zhang Xutao1ORCID,Ao Lei3ORCID,Jiang Nian4,Shi Suixing56,Huo Zifan5,Zhang Yanhui5,Yi Ruixuan5,Zou Jin7ORCID,Gan Xuetao12ORCID,Chen Pingping58

Affiliation:

1. Microelectronics and Nanoelectronics Department, School of Microelectronics, Frontiers Science Center for Flexible Electronics, and Xi’an Institute of Flexible Electronics (IFE), Xi’an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China

2. Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China

3. Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330018, China

4. China astronautics standards Institute, Beijing 100071, China

5. Advanced Instrumentation & Technology Centre, Research School of Astronomy and Astrophysics, the Australian National University, Canberra 2611, Australia

6. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

7. Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia

8. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China

Abstract

The illustration of Bi catalyzed InAsBi growth (left) and the band diagram of InAs0.875Bi0.125 (right).

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Natural Science Foundation of Jiangxi Province

Publisher

Royal Society of Chemistry (RSC)

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