Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Author:

Lee Donghyun1,Lee Jong Won2,Jang Jeonghwan1,Shin In-Su1,Jin Lu1,Park Jun Hyuk2,Kim Jungsub3,Lee Jinsub3,Noh Hye-Seok3,Kim Yong-Il3,Park Youngsoo3,Lee Gun-Do1,Park Yongjo4,Kim Jong Kyu2,Yoon Euijoon145ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea

2. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea

3. Advanced Development Team, LED Business, Samsung Electronics, Yongin 17113, South Korea

4. Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 16229, South Korea

5. Research Institute of Advanced Materials and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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