Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121436
Reference11 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Shortest wavelength semiconductor laser diode
3. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
4. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
5. Growth of InGaN Films by MBE at the Growth Temperature of GaN
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