Carrier dynamics of InxGa1−xN quantum disks embedded in GaN nanocolumns-Reference-Cited by-同舟云学术

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Carrier dynamics of InxGa1−xN quantum disks embedded in GaN nanocolumns

Published:2011-03-15 Issue:6 Volume:109 Page:063515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Holmes Mark J.,Park Young S.,Wang Xu,Chan Christopher C. S.,Jarjour Anas F.,Taylor Robert A.,Warner Jamie H.,Luo Jun,El-Ella H. A. R.,Oliver R. A.

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3558990

Reference34 articles.

1. The Blue Laser Diode

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

4. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells

5. Spontaneous polarization effects inGaN/AlxGa1−xNquantum wells

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires;The Journal of Physical Chemistry Letters;2015-06-24

2. Carrier dynamics in site- and structure-controlled InGaN/GaN quantum dots;Physical Review B;2014-12-30

3. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk;Journal of Applied Physics;2014-11-07

4. How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties;Applied Physics Letters;2014-02-03

5. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01

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