Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder-Reference-Cited by-同舟云学术

Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder

Published:2020-07-13 Issue:2 Volume:117 Page:022107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Qwah K. S.¹^ORCID,Monavarian M.¹^ORCID,Lheureux G.¹^ORCID,Wang J.¹^ORCID,Wu Y.-R.²^ORCID,Speck J. S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan

Funder

National Science Foundation

Air Force Office of Scientific Research

Ministry of Science and Technology, Taiwan

Simons Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0006291

Reference33 articles.

1. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

2. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

3. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

4. Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors

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