AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3294633
Reference20 articles.
1. Resonant tunneling in semiconductor double barriers
2. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
3. Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields
4. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes
5. Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
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