Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures-Reference-Cited by-同舟云学术

Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

Published:2003-11-24 Issue:7 Volume: Page:2389-2392
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Foxon C. T.¹,Novikov S. V.¹²,Belyaev A. E.³,Zhao L. X.¹,Makarovsky O.¹,Walker D. J.¹,Eaves L.¹,Dykeman R. I.⁴,Danylyuk S. V.⁵,Vitusevich S. A.⁵,Kappers M. J.⁶,Barnard J. S.⁶,Humphreys C. J.⁶

Affiliation:

1. School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK

2. On leave from the Ioffe Physico‐Technical Institute, St. Petersburg, Russia

3. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Ukraine

4. School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2RD, UK

5. Insitut für Schichten und Grenzflächen, Forschungszentrum Jülich, 52425 Jülich, Germany

6. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 3QZ, UK

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303376

Reference7 articles.

1. AlGaN Resonant Tunneling Diodes Grown by rf-MBE

2. Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices

3. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

4. Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields

5. Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures

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