Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes-Reference-Cited by-同舟云学术

Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes

Published:2023-07 Issue:7 Volume:70 Page:3483-3488
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang W.-D.¹^ORCID,Brown E. R.²,Growden T. A.³^ORCID,Berger P. R.³^ORCID

Affiliation:

1. Department of Physics, Wright State University, Dayton, OH, USA

2. Department of Physics and the Department of Electrical Engineering, Wright State University, Dayton, OH, USA

3. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA

Funder

U.S. Office of Naval Research through the III-N Devices and Architectures for Terahertz Electronics (DATE) Multidisciplinary Research Program of the University Research Initiative (MURI) Program

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/10159202/10144376-aam.pdf

Reference45 articles.

1. Resonant tunneling in semiconductor heterostructures;leadbeater,1990

2. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

3. 1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate

4. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

5. Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

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1. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

2. Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates;Applied Physics Letters;2024-02-12