Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation-Reference-Cited by-同舟云学术

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Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

Published:1997-05-19 Issue:20 Volume:70 Page:2753-2755
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nakamura Shuji,Senoh Masayuki,Nagahama Shin-ichi,Iwasa Naruhito,Yamada Takao,Matsushita Toshio,Sugimoto Yasunobu,Kiyoku Hiroyuki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118973

Reference17 articles.

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

4. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

5. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

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