Influence of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1493237
Reference13 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. First-principles study on electronic and elastic properties of BN, AlN, and GaN
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
4. Solid phase immiscibility in GaInN
5. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Broad Band Light Absorption and High Photocurrent of (In,Ga)N Nanowire Photoanodes Resulting from a Radial Stark Effect;ACS Applied Materials & Interfaces;2016-12-12
2. Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN;Applied Physics Letters;2016-07-25
3. Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes;Applied Physics Letters;2012-09-17
4. Thermal effect on the electroluminescence of InGaN/GaN multiquantum-well light-emitting devices;Solid-State Electronics;2012-02
5. Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN;Physical Review B;2011-08-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3