Broad Band Light Absorption and High Photocurrent of (In,Ga)N Nanowire Photoanodes Resulting from a Radial Stark Effect
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b12874
Reference45 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
2. Band bowing and band alignment in InGaN alloys
3. Structural perfection of InGaN layers and its relation to photoluminescence
4. Control of InAs Nanowire Growth Directions on Si
5. Dislocation Filtering in GaN Nanostructures
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