Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)-Reference-Cited by-同舟云学术

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

Published:2022 Issue:2 Volume:4 Page:562-572
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Volkov Roman¹^ORCID,Borgardt Nikolai I.¹^ORCID,Konovalov Oleg V.²^ORCID,Fernández-Garrido Sergio³^ORCID,Brandt Oliver³^ORCID,Kaganer Vladimir M.³^ORCID

Affiliation:

1. National Research University of Electronic Technology — MIET, Bld. 1, Shokin Square, Zelenograd, Moscow 124498, Russia

2. ESRF – The European Synchrotron, 71 avenue des Martyrs, 38043 Grenoble, France

3. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5–7, 10117 Berlin, Germany

Abstract

Two distinct trends in the evolution of the shapes of GaN nanowires are observed. A roundish shape at the bottom, shadowed from the impinging fluxes, is the equilibrium crystal shape, while the hexagonal shape at the top is driven kinetically.

Funder

Ministerio de Ciencia e Innovación

Ministry of Science and Higher Education of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D1NA00773D

Reference55 articles.

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4. Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields

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