Dislocation Filtering in GaN Nanostructures-Reference-Cited by-同舟云学术

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Dislocation Filtering in GaN Nanostructures

Published:2010-04-16 Issue:5 Volume:10 Page:1568-1573
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Colby Robert¹²,Liang Zhiwen¹²,Wildeson Isaac H.²³,Ewoldt David A.¹²,Sands Timothy D.¹²³,García R. Edwin¹²,Stach Eric A.¹²

Affiliation:

1. School of Materials Engineering, 701 Northwestern Avenue, Purdue University, West Lafayette, IN 47907

2. Birck Nanotechnology Center, 1205 W. State Street, Purdue University, West Lafayette, IN 47907

3. School of Electrical and Computer Engineering, 465 Northwestern Avenue, Purdue University, West Lafayette, IN 47907

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl9037455

Reference30 articles.

1. SEMICONDUCTOR NANOWIRES AND NANOTUBES

2. Hirth, J. P.; Lothe, J.Theory of Dislocations,2nd ed.John-Wiley and Sons:New York, 1982; pp149−152.

3. New approach to the high quality epitaxial growth of lattice‐mismatched materials

4. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

5. Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials

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