Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference48 articles.
1. Wide-bandgap semiconductor materials: for their full bloom;Fujita;Jpn. J. Appl. Phys.,2015
2. Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN high-electron-mobility transistors;Katsuno;Jpn. J. Appl. Phys.,2013
3. Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes;Youn;NANOTECHNOLOG,2013
4. Growth of GaN nanotubes by halide vapor phase epitaxy;Hemmingsson;NANOTECHNOLOG,2011
5. Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3;Iso;Jpn. J. Appl. Phys.,2019
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on Growth Quality of GaN Deposition on Nanopillar-Patterned Substrates: Microstructure Characterization and Crystalline Quality Optimization;Crystal Growth & Design;2024-09-12
2. Molecular dynamics study on nanogrinding behavior of lamellar heterostructure gallium nitride;Journal of Materials Science;2024-07
3. Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites;Materials Science in Semiconductor Processing;2024-06
4. Homogeneous Growth of 3C-SiC Crystal Surface at Solid–Liquid Interface and Its Competitive Relationship;JOM;2024-04-23
5. Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces;Crystal Growth & Design;2024-03-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3