Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3

Abstract

Abstract GaN with a film thickness of 200–600 μm was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAATTM) bulk seed that comprised only semipolar { 10 1 ¯ 1 ¯ } planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy; further, the GaN film was also characterized. The FWHM value of the X-ray rocking curves was ∼40″, which was almost similar to the value of the used seed. The curvature radii were as large as 40–64 m. Further, the carrier concentrations were observed to be as small as 5.1 × 1017–9.1 × 1017 cm−3. However, the basal plane stacking fault densities were observed to be 3.4 × 101–5.4 × 101 cm−1 and were observed to increase during the growth process because of the as-grown SCAATTM seed surface condition.