Control of InAs Nanowire Growth Directions on Si-Reference-Cited by-同舟云学术

Control of InAs Nanowire Growth Directions on Si

Published:2008-09-11 Issue:10 Volume:8 Page:3475-3480
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tomioka Katsuhiro¹,Motohisa Junichi¹,Hara Shinjiroh¹,Fukui Takashi¹

Affiliation:

1. Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North14 West9, 060-0814, Sapporo, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802398j

Reference28 articles.

1. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

2. Growth of nanowire superlattice structures for nanoscale photonics and electronics

3. Epitaxial core–shell and core–multishell nanowire heterostructures

4. Logic Gates and Computation from Assembled Nanowire Building Blocks

5. Room-Temperature Ultraviolet Nanowire Nanolasers

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