Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes-Reference-Cited by-同舟云学术

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Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

Published:2012-09-17 Issue:12 Volume:101 Page:121919
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

De Suman,Layek Arunasish,Bhattacharya Sukanya,Kumar Das Dibyendu,Kadir Abdul,Bhattacharya Arnab,Dhar Subhabrata,Chowdhury Arindam

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4754079

Reference26 articles.

1. Prospects for LED lighting

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

4. The benefit of disorder

5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

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