First-principles study on electronic and elastic properties of BN, AlN, and GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368739
Reference93 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
3. Strain effect on electronic and optical properties of GaN/AlGaN quantum‐well lasers
4. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
5. Effective masses and valence-band splittings in GaN and AlN
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