Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer-Reference-Cited by-同舟云学术

Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer

Published:2019-05 Issue:5 Volume:9 Page:055004
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Luo Zongyan¹,Lu Shiqiang¹,Li Jinchai¹^ORCID,Wang Chuanjia¹,Chen Hangyang¹,Liu Dayi¹,Lin Wei¹,Yang Xu¹,Kang Junyong¹

Affiliation:

1. Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5091027

Reference34 articles.

1. Advances in group III-nitride-based deep UV light-emitting diode technology

2. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

3. Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

4. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

5. High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

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2. Investigation of optical polarization characteristics for an AlGaN-based quantum well structure;Japanese Journal of Applied Physics;2020-07-16

3. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review;Journal of Physics D: Applied Physics;2019-12-09