Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Reference21 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
3. Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
4. Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification
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