High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography-Reference-Cited by-同舟云学术

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High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Published:2016-11-04 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Zhang Lisheng,Xu Fujun,Wang Jiaming,He Chenguang,Guo Weiwei,Wang Mingxing,Sheng Bowen,Lu Lin,Qin Zhixin,Wang Xinqiang,Shen Bo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep35934.pdf

Reference19 articles.

1. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Tech. 26, 014036 (2011).

2. Yan, J. C. et al. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE. J. Cryst. Growth 414, 254–257 (2015).

3. Jindal, V. & Shahedipour-Sandvik, F. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN. J. Appl. Phys. 105, 84902 (2009).

4. Jain, R. et al. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Appl. Phys. Lett. 93, 051113 (2008).

5. Imura, M. et al. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J. Cryst. Growth 298, 257–260 (2007).

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