Stress distribution mapping of GaAs on Si conformal layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2436840
Reference17 articles.
1. Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
2. Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data
3. Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition
4. High quality GaAs on Si by conformal growth
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