Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells-Reference-Cited by-同舟云学术

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Published:2016-07 Issue:4 Volume:34 Page:041304
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Landesman Jean-Pierre¹,Jiménez Juan²,Levallois Christophe³,Pommereau Frédéric⁴,Frigeri Cesare⁵,Torres Alfredo²,Léger Yoan³,Beck Alexandre³,Rhallabi Ahmed⁶

Affiliation:

1. Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes, France

2. GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid, Spain

3. UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes, France

4. III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau, France

5. CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma, Italy

6. Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes, France

Funder

Junta de Castilla y Leon

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4950445

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