Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy-Reference-Cited by-同舟云学术

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Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

Published:2017-03 Issue:3 Volume:17 Page:398-402
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Taegeon,Rho Heesuk,Song Jin Dong,Choi Won Jun

Funder

National Research Foundation of Korea

Ministry of Education

Korea Basic Science Institute Research

Research Base Construction Fund Support Program

Chonbuk National University

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference15 articles.

1. Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device

2. High absorption efficiency of AlGaAs/GaAs superlattice solar cells

3. Terahertz GaAs/AlAs quantum-cascade lasers

4. Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications

5. Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask

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1. Third harmonic generation of a 12–6 GaAs/Ga$$_{1-x}$$Al$$_x$$As double quantum well: effect of external fields;The European Physical Journal Plus;2024-04-27

2. Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE;Journal of Electronic Materials;2023-06-27

3. Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination;Materials;2021-01-19

4. Evolution of optical phonons in epitaxial Ge 1− y Sn y structures;Journal of Raman Spectroscopy;2020-09-18

5. Electron states and electron Raman scattering in a semiconductor quantum well with step-barriers: Electric field effect;Physica B: Condensed Matter;2019-12

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