Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask-Reference-Cited by-同舟云学术

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Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2mask

Published:2012-11-16 Issue:49 Volume:23 Page:495306
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Hsu Chao-Wei,Chen Yung-Feng,Su Yan-Kuin

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=49/a=495306/pdf

Reference28 articles.

1. The integration of III-V optoelectronics with silicon circuitry

2. Heteroepitaxial Growth of Vertical GaAs Nanowires on Si (111) Substrates by Metal−Organic Chemical Vapor Deposition

3. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

4. A Systematic Study on the Growth of GaAs Nanowires by Metal−Organic Chemical Vapor Deposition

5. Control of structural defects in group III V N alloys grown on Si

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1. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks;physica status solidi (b);2022-12-29

2. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001);AIP Advances;2021-07-01

3. Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy;IEEE Journal of Selected Topics in Quantum Electronics;2021

4. Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy;physica status solidi (a);2020-11-02

5. Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers;Semiconductor Science and Technology;2020-08-25

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