Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341141
Reference29 articles.
1. MBE Growth of GaAs on Si: Problems and Progress
2. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
3. Molecular beam epitaxy of GaAs and AlGaAs on Si
4. Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications
5. Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si
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