Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy

Published:2011-07-26 Issue:9 Volume:11 Page:3673-3676
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lee S. C.¹,Dawson L. R.¹,Huang S. H.²,Brueck S. R. J.¹

Affiliation:

1. Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, United States

2. Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131, United States

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg101363q

Reference19 articles.

1. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

2. Analysis of strained‐layer superlattice effects on dislocation density reduction in GaAs on Si substrates

3. GaAs growth properties on V‐grooved Si substrates

4. Thermal stresses in square‐patterned GaAs/Si: A finite‐element study

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