Abstract
ABSTRACTSeveral fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates
Publisher
Springer Science and Business Media LLC
Reference21 articles.
1. GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
2. A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates
3. 5. Sakai S. , Soga T. , Takeyasu M. , and Umeno M. , these Proceedings.
4. LEED study of the stepped surface of vicinal Si (100)
5. 4. Ishizaka A. , Nakagawa K. , and Shiraki Y. , Collected papers, Proc. 2nd Int. Symp. MBE/CST, Tokyo 1982, Japan Soc. Appl. Phys., pp. 183 ff.
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