Abstract
ABSTRACTSeveral fundamental problems are reviewed that must be solved if GaAs on Si growth is to be achieved with device-quality already close to the GaAs/Si interface, rather than relying on thick buffer layers: (a) antiphase disorder, (b) interface charge and cross-doping, and (c) misfit dislocations. An extensive discussion is given of the mechanism by which antiphase disorder is suppressed on (100)-oriented substrates
Publisher
Springer Science and Business Media LLC
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