A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates-Reference-Cited by-同舟云学术

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A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Published:1986-02 Issue:2 Volume:33 Page:206-213
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fischer R.J.,Chand N.,Kopp W.F.,Chin-Kun Peng ,Morkoc H.,Gleason K.R.,Scheitlin D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31949/01485684.pdf?arnumber=1485684

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS2Treatment;Japanese Journal of Applied Physics;1999-12-15

2. Silicon substrate optimization for microwave applications of GaAs/Si MESFETs;Materials Science and Engineering: B;1997-02

3. A small-signal linear equivalent circuit of HEMTs fabricated on GaAs-on-Si wafers;IEEE Transactions on Microwave Theory and Techniques;1996-05

4. The electrical and optical characteristics of GaAs on Si by modified flow rate modulation epitaxy;Applied Surface Science;1996-02

5. Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets;MRS Proceedings;1995

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