Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy-Reference-Cited by-同舟云学术

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Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy

Published:1995-07-15 Issue:Part 1, No. 7A Volume:34 Page:3457-3466
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yodo Tokuo,Tamura Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Heterogeneously Integrated III-V on Silicon for Future Nanoelectronics;ECS Transactions;2012-04-27

2. Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates;Superlattices and Microstructures;2009-04

3. A Study of Conformal GaAs on Si Layers by Micro-Raman and Spectral Imaging Cathodoluminescence;MRS Proceedings;2008

4. Stress distribution mapping of GaAs on Si conformal layers;Journal of Applied Physics;2007-03

5. Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers;Journal of Physics: Condensed Matter;2003-12-22

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