Vertical strain and doping gradients in thick GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120097
Reference11 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Spatial distribution of the luminescence in GaN thin films
4. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
5. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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