Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface-Reference-Cited by-同舟云学术

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Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface

Published:1996-02-26 Issue:9 Volume:68 Page:1265-1266
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Siegle H.,Thurian P.,Eckey L.,Hoffmann A.,Thomsen C.,Meyer B. K.,Amano H.,Akasaki I.,Detchprohm T.,Hiramatsu K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115947

Reference9 articles.

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Light Emission by Nanoporous GaN Produced by a Top-Down, Nonlithographical Nanopatterning;Journal of Nanomaterials;2018-10-04

3. Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels;Physics of the Solid State;2015-04

4. Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures;Review of Scientific Instruments;2013-11

5. Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer;Science China Physics, Mechanics and Astronomy;2013-07-25

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