Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer

Published:2018-10 Issue: Volume:122 Page:74-79
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Deng Gaoqiang,Zhang Yuantao,Yu Ye,Huang Zhen,Han Xu,Chen Liang,Yan Long,Li Pengchong,Dong Xin,Zhao Degang,Du Guotong

Funder

National Key Research and Development Program

National Natural Science Foundation of China

Science and Technology Developing Project of Jilin Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

2. Internal quantum efficiency in polar and semipolar (11–22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red

3. Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

4. High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

5. Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote Epitaxy and Exfoliation of GaN via Graphene;ACS Applied Electronic Materials;2022-10-25

2. Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment;Surface Topography: Metrology and Properties;2021-02-03

3. Microstructural Characterization of GaN Grown on SiC;MICROSC MICROANAL;2019

4. Microstructural Characterization of GaN Grown on SiC;Microscopy and Microanalysis;2019-08-01

5. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs;Journal of Semiconductors;2019-05-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3