Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence-Reference-Cited by-同舟云学术

Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence

Published:2017-11-20 Issue:21 Volume:111 Page:212102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wen Pengyan¹²,Liu Jianping¹²^ORCID,Zhang Shuming¹²,Zhang Liqun¹²,Ikeda Masao¹²,Li Deyao¹²,Tian Aiqin¹²,Zhang Feng¹²,Cheng Yang¹²,Zhou Wei¹²,Yang Hui¹²

Affiliation:

1. Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Funder

the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists

the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows

the National Key R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001372

Reference25 articles.

1. 450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM

2. High efficient GaN-based laser diodes with tunnel junction

3. Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier

4. Identification of degradation mechanisms of blue InGaN/GaN laser diodes

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