Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier-Reference-Cited by-同舟云学术

Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier

Published:2013-03-28 Issue:12 Volume:113 Page:123108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Alahyarizadeh Gh.,Hassan Z.,Yam F. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4798388

Reference39 articles.

1. Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer

2. Simulation and optimization of deep violet InGaN double quantum well laser

3. Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer

4. Higher efficiency InGaN laser diodes with an improved quantum well capping configuration

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate;The European Physical Journal D;2024-02

2. Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes;Optical Engineering;2022-07-01

3. Composition-graded quantum barriers improve performance in InGaN-based laser diodes;Semiconductor Science and Technology;2021-09-24

4. Improved performance characteristics of violet InGaN MQW LDs through asymmetric W-shaped quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2021-03

5. Optimization of a New GaN-Based Blue Laser Diode with a Quadruple Asymmetric Waveguide for High Efficiency Performance;International Journal of Optics and Photonics;2021-01-01