Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798388
Reference39 articles.
1. Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer
2. Simulation and optimization of deep violet InGaN double quantum well laser
3. Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer
4. Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
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1. Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes;Optical Engineering;2022-07-01
2. Composition-graded quantum barriers improve performance in InGaN-based laser diodes;Semiconductor Science and Technology;2021-09-24
3. Improved performance characteristics of violet InGaN MQW LDs through asymmetric W-shaped quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2021-03
4. Optimization of a New GaN-Based Blue Laser Diode with a Quadruple Asymmetric Waveguide for High Efficiency Performance;International Journal of Optics and Photonics;2021-01-01
5. Efficiency enhancement in InGaN-based laser diodes using an optimized Al0.12Ga0.88N electron blocking layer;Semiconductor Science and Technology;2020-09-09
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