Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1524690
Reference14 articles.
1. Three years of InGaN quantum-well lasers: commercialization already
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
4. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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