Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD-Reference-Cited by-同舟云学术

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Published:2017-01-23 Issue:7 Volume:50 Page:075101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tian Pengfei,Edwards Paul R,Wallace Michael J,Martin Robert W,McKendry Jonathan J D,Gu Erdan,Dawson Martin D,Qiu Zhi-Jun,Jia Chuanyu,Chen Zhizhong,Zhang Guoyi,Zheng Lirong,Liu Ran

Funder

State Key Laboratory of Luminescence and Applications

Fudan University

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=7/a=075101/pdf

Reference28 articles.

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3. Wireless Optofluidic Systems for Programmable In Vivo Pharmacology and Optogenetics

4. Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

5. High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

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