Optimizing HVPE flow field to achieve GaN crystal uniform growth-Reference-Cited by-同舟云学术

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Optimizing HVPE flow field to achieve GaN crystal uniform growth

Published:2023-07 Issue: Volume:614 Page:127214
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Yuzhu,Chen Chengmin,Yu Jiaoxian,Wang Guodong,Wang Shouzhi,Liu Lei,Liu Guangxia,Xu Xiangang,Zhang Lei

Funder

Science, Technology and Innovation Commission of Shenzhen Municipality

Shandong University

State Key Laboratory of Crystal Materials

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. High-power GaN electronic devices;Zhang;Crit. Rev. Solid State,2002

2. Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates;Vampola;Phys. Status. Solidi. (a),2009

3. Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD;Tian;J. Phys. D: Appl. Phys.,2017

4. High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE;Huo;Sci. Rep.,2018

5. Process and Equipment of Gallium Nitride Single Crystal Grown by Ammonothermal Method, B;Zhou;Chin. Ceram. Soc.,2013

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