High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-21607-3.pdf
Reference38 articles.
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3. Ye, P. D. et al. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Appl. Phys. Lett. 86, 063501, https://doi.org/10.1063/1.1861122 (2005).
4. Suihkonen, S. et al. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency. J. Cryst. Growth 298, 740–743, https://doi.org/10.1016/j.jcrysgro.2006.10.131 (2007).
5. Fujito, K. et al. Bulk GaN crystals grown by HVPE. J. Cryst. Growth 311, 3011–3014, https://doi.org/10.1016/j.jcrysgro.2009.01.046 (2009).
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