Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369481
Reference31 articles.
1. Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping
2. Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening
3. Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy
4. Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy
5. Growth and band gap of strained 〈110〉 Si1−xGexlayers on silicon substrates by chemical vapor deposition
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy;Materials Science in Semiconductor Processing;2020-07
2. Optical and sensing properties of Al doped ZnO nanocrystalline thin films prepared by spray pyrolysis;Materials Today: Proceedings;2018
3. Challenges and Opportunities in Fabrication of Transparent Superhydrophobic Surfaces;Current Nanoscience;2016-05-23
4. ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes;Optics Letters;2013-11-22
5. Room temperature deposition of IZTO transparent anode films for organic light-emitting diodes;Materials Research Bulletin;2012-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3