Author:
Saito Shingo,Sano Yuichi,Yamada Takane,Hara Kosuke O.,Yamanaka Junji,Nakagawa Kiyokazu,Arimoto Keisuke
Funder
"Grants-in-Aid for Scientific Research" provided by
Japan Society for the Promotion of Science
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference30 articles.
1. (110)-Surface strained-SOI CMOS devices with higher carrier mobility;Mizuno;Symp. VLSI Technol.,2003
2. 110)-Surface strained-SOI CMOS devices;Mizuno;IEEE Trans. Electron. Dev.,2005
3. Very high carrier mobility for high-performance CMOS on a Si(110) surface;Teramoto;IEEE Trans. Electron. Dev.,2007
4. High performance CMOS fabricated on hybrid substrate with different crystal orientations;Yang;IEDM,2003
5. 1.5-nm gate oxide CMOS on (110) surface-oriented Si substrate;Sasaki Momose;IEEE Trans. Electron. Dev.,2003
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