Growth and band gap of strained 〈110〉 Si1−xGexlayers on silicon substrates by chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113079
Reference12 articles.
1. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
2. Growth of GexSi1−xalloys on Si(110) surfaces
3. Intersubband absorption in Sb δ‐doped Si/Si1−xGexquantum well structures grown on Si (110)
4. Luminescence from Strained Si1-xGex/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
5. Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors
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