Growth of GexSi1−xalloys on Si(110) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106316
Reference14 articles.
1. Defects in epitaxial multilayers
2. Defects in epitaxial multilayers
3. Relaxation of strained‐layer semiconductor structures via plastic flow
4. Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures
5. Dislocation nucleation near the critical thickness in GeSi/Si strained layers
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