Author:
Eaglesham D. J.,Kvam E. P.,Maher D. M.,Humphreys C. J.,Bean J. C.
Subject
Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Bacon, D. J. 1984.Fundamentals of Deformation and Fracture, Eshelby Memoral Symposium of the International Union of Theoretical and Applied Mechanics, Edited by: Billey, Miller and Willis. 401Cambridge University Press.
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Dodson, B. W. 1988.Mater. Res. Soc. Proc., Vol. 116, 491Pittsburgh, Pennsylvania: Materials Research Society.
4. Relaxation of strained‐layer semiconductor structures via plastic flow
5. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
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