Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers-Reference-Cited by-同舟云学术

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

Published:2021-11-29 Issue:22 Volume:119 Page:221102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chow Y. C.¹^ORCID,Lynsky C.¹^ORCID,Wu F.¹,Nakamura S.¹²^ORCID,DenBaars S. P.¹²^ORCID,Weisbuch C.¹³,Speck J. S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

3. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau, France

Funder

U.S. Department of Energy

Collaborative Research in Engineering, Science and Technology Centre

Sandia National Laboratories

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Simons Foundation

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0073741

Reference33 articles.

1. Efficiency droop in light-emitting diodes: Challenges and countermeasures

2. J.I. Shim , in III-Nitride Based Light Emitting Diodes and Applications, edited by T.Y. Seong , J. Han , H. Amano , and H. Morkoç ( Springer, Dordrecht, 2013), pp. 153–195.

3. The efficiency challenge of nitride light-emitting diodes for lighting

4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

5. InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction;Digest Journal of Nanomaterials and Biostructures;2023-12-20

2. Electron Oscillation‐Induced Splitting Electroluminescence from Nano‐LEDs for Device‐Level Encryption;Advanced Materials;2023-12-03

3. Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes;Applied Physics Letters;2023-08-28

4. Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction;2023-06-19

5. Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells;physica status solidi (a);2023-06