InGaN light-emitting diodes: Efficiency-limiting processes at high injection-Reference-Cited by-同舟云学术

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InGaN light-emitting diodes: Efficiency-limiting processes at high injection

Published:2013-09 Issue:5 Volume:31 Page:050809
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Avrutin Vitaliy,Hafiz Shopan din Ahmad,Zhang Fan,Özgür Ümit,Morkoç Hadis,Matulionis Arvidas

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4810789

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Small signal analysis of the modulation bandwidth of light-emitting diodes for visible light communication;Optics & Laser Technology;2022-08

2. Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers;Applied Physics Letters;2021-11-29

3. Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs;Applied Physics Letters;2021-08-02

4. Improved performance of InGaN/GaN Near-UV light-emitting diodes with staircase hole injector;Engineering Research Express;2021-01-06

5. The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance;Materials Science in Semiconductor Processing;2021-01

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