Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE-Reference-Cited by-同舟云学术

Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE

Published:2020-05-04 Issue:18 Volume:116 Page:182106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bin Anooz S.¹^ORCID,Grüneberg R.¹,Wouters C.¹^ORCID,Schewski R.¹^ORCID,Albrecht M.¹^ORCID,Fiedler A.¹^ORCID,Irmscher K.¹^ORCID,Galazka Z.¹^ORCID,Miller W.¹^ORCID,Wagner G.¹,Schwarzkopf J.¹^ORCID,Popp A.¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany

Funder

Europaische Fonds fur regionals Entwicklung

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005403

Reference36 articles.

1. Brillouin zone and band structure of β-Ga2O3

2. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

3. MBE grown Ga2O3 and its power device applications

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

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