Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4897952
Reference38 articles.
1. After Hard Drives—What Comes Next?
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4. Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness
5. SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer
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