Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications-Reference-Cited by-同舟云学术

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Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Published:2021-03-12 Issue:4 Volume:7 Page:2000835
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Gupta Prachi¹,Kumar Rudra¹,Sharma Satinder K.¹^ORCID

Affiliation:

1. School of Computing and Electrical Engineering (SCEE) Indian Institute of Technology (IIT) Mandi Mandi Himachal Pradesh 175075 India

Funder

Department of Science and Technology, Government of Kerala

Science and Engineering Research Board

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000835

Reference81 articles.

1. Metal-organic frameworks

2. Metal–organic frameworks as semiconductors

3. The Chemistry and Applications of Metal-Organic Frameworks

4. Solution-Deposited Organic–Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors

5. Chemical principles for electroactive metal–organic frameworks

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Facile DUV Irradiated Solution-Processed ZrO₂/In₂O₃ for Low Voltages FET Applications;IEEE Transactions on Electron Devices;2024-06

2. Nanoscale Probing of Surface Charges in Functional Copper‐Metal Organic Clusters by Kelvin Probe Force Microscopy for Field‐Effect Transistors;Advanced Materials Interfaces;2021-09-26

3. Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications;Advanced Electronic Materials;2021-03-12

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