Ge composition in Si[sub 1−x]Ge[sub x] films grown from SiH[sub 2]Cl[sub 2]/GeH[sub 4] precursors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference21 articles.
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4. Kinetics of epitaxial Si1−xGex growth using SiH2Cl2–GeH4–H2 mixture in reduced‐pressure chemical vapor deposition
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